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2SA1046 - PNP Transistor

General Description

High Collector-Emitter Breakdown Voltage- V(BR)CEO= -100V(Min) High Current Capability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching applications High frequency power amplifie

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isc Silicon PNP Darlington Power Transistor 2SA1046 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -100V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching applications ·High frequency power amplifier ·DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 100 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.