High Voltage and High Current
Vceo=-60V(Min.)
Excellent hFE Linearity
Low Noise
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Audio frequency general purpose amplifier Applications
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isc Silicon PNP Transistor
DESCRIPTION ·High Voltage and High Current
Vceo=-60V(Min.) ·Excellent hFE Linearity ·Low Noise ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio frequency general purpose amplifier Applications ·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Curren
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
2SA1283
VALUE
UNIT
-60
V
-60
V
-6
V
-1
A
900
mW
150
℃
-55~150
℃
isc website: www.iscsemi.