High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -230V(Min)
Good Linearity of hFE
Complement to Type 2SC3263
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio and general purpose applications
ABSOLUTE MAXI
Full PDF Text Transcription for 2SA1294 (Reference)
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2SA1294. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3263 ·Minimum L...
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30V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3263 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 130 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1294 isc website：www.iscsemi.
2SA1294 Datasheet
