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INCHANGE

2SA1294 Datasheet Preview

2SA1294 Datasheet

PNP Transistor

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isc Silicon PNP Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -230V(Min)
·Good Linearity of hFE
·Complement to Type 2SC3263
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-230
V
VCEO
Collector-Emitter Voltage
-230
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
-4
A
130
W
150
Tstg
Storage Temperature Range
-55~150
2SA1294
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SA1294 Datasheet Preview

2SA1294 Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A
ICBO
Collector Cutoff Current
VCB= -230V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -5A ; VCE= -4V
COB
Output Capacitance
IE= 0 ; VCB= -10V;f= 1.0MHz
fT
Current-Gain—Bandwidth Product
IE= 2A ; VCE= -12V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -5A ,RL= 12Ω,
IB1= -IB2= -0.5A,VCC= -60V
hFE Classifications
O
Y
50-100 70-140
2SA1294
MIN TYP. MAX UNIT
-230
V
-2.0 V
-100 μA
-100 μA
50
140
500
pF
35
MHz
0.35
μs
1.5
μs
0.3
μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SA1294
Description PNP Transistor
Maker INCHANGE
Total Page 3 Pages
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2SA1294 Datasheet PDF





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