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2SA1932 - PNP Transistor

General Description

High collector breakdown voltage Complementary to 2SC5174 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power amplifier applications.

Driver stage amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1932 DESCRIPTION ·High collector breakdown voltage ·Complementary to 2SC5174 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -0.1 A 1.8 W 25 150 ℃ -55~150 ℃ isc website： www.iscsemi.