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2SA2057 - PNP Transistor

General Description

High speed switching Low collector-emitter saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply for audio & visual equipments such as TVS and VCRS Industrial equipments suc

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isc Silicon PNP Power Transistor DESCRIPTION ·High speed switching ·Low collector-emitter saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power supply for audio & visual equipments such as TVS and VCRS ·Industrial equipments such as DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -3 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -6 A 2.