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2SA2062 - PNP Transistor

General Description

Large current capacitance Wide ASO and high durability against breakdown 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS 140V/10V,AF 70W output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA

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isc Silicon PNP Power Transistor DESCRIPTION ·Large current capacitance ·Wide ASO and high durability against breakdown ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·140V/10V,AF 70W output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -20 A 2.5 W 110 150 ℃ Tstg Storage Temperature -55~150 ℃ INCHANGE Semiconductor 2SA2062 isc website： www.iscsemi.