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2SA562 - PNP Transistor

General Description

Low Saturation Voltage

and reliable operation.

Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high-speed switching and Amplifier applications.

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA562 DESCRIPTION ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching and Amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature VALUE -35 -30 -5 -0.5 0.5 150 -55~150 UNIT V V V A W ℃ ℃ isc website:www.iscsemi.