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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA562
DESCRIPTION ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation. ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-speed switching and Amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
VALUE -35 -30 -5 -0.5 0.5 150
-55~150
UNIT V V V A W ℃ ℃
isc website:www.iscsemi.