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2SA635 - PNP Transistor

General Description

With TO-202 package High current capability

and reliable operation.

Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter V

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA635 DESCRIPTION ·With TO-202 package ·High current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature VALUE -60 -60 -5 -1.0 10 150 -55~150 UNIT V V V A W ℃ ℃ isc website：www.iscsemi.