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2SA700 - PNP Transistor

General Description

High Collector Current -IC= -1.5A Collector-Emitter Breakdown Voltage- : V(BR)CEO= -35V(Min) Good Linearity of hFE Low Saturation Voltage

and reliable operation.

Designed for medium power amplifie

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current -IC= -1.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -35V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 8 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA700 isc website：www.iscsemi.