DC Current Gain-
: hFE= 40(Min)@ IC= -0.15A
Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= -35V(Min)
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use as audio amplifiers and drivers utilizing
complementary or q
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isc Silicon PNP Power Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= -0.15A ·Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= -35V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-35
VCEO
Collector-Emitter Voltage
-35
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-1.5
IB
Base Current-Continuous
-0.5
Collector Power Dissipation @ Ta=25℃
1.
2SA779 Datasheet
