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INCHANGE

2SA965 Datasheet Preview

2SA965 Datasheet

PNP Transistor

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isc Silicon PNP Power Transistor
DESCRIPTION
·Power amplifier applications
·Driver stage amplifier applications
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
2SA965
APPLICATIONS
·Designed for Switching and amplification
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ Ta<50
J
Junction Temperature
Tstg
Storage Temperature Range
VALUE
-120
-120
-5
-0.8
-0.9
150
-55~150
UNIT
V
V
V
A
W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

2SA965 Datasheet Preview

2SA965 Datasheet

PNP Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-base breakdown Voltage IC= -10mA; IE= 0
VEBO Emitter-base breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA
VBE(on) Base-Emitter on Voltage
VCE = -5V, IC= -500mA
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
VEB= -5V; IC= 0
IC=-100mA ; VCE= -5V
2SA965
MIN TYP. MAX UNIT
-120
V
-5
v
-1.0 V
-1.0 V
-100 nA
-100 nA
-80
-240
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark



Part Number 2SA965
Description PNP Transistor
Maker INCHANGE
Total Page 3 Pages
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2SA965 Datasheet PDF





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