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2SA965 - PNP Transistor

General Description

Power amplifier applications Driver stage amplifier applications Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SA965 APPLICATIONS Designed for Switching and amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR

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isc Silicon PNP Power Transistor DESCRIPTION ·Power amplifier applications ·Driver stage amplifier applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SA965 APPLICATIONS ·Designed for Switching and amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ Ta<50℃ J Junction Temperature Tstg Storage Temperature Range VALUE -120 -120 -5 -0.8 -0.9 150 -55~150 UNIT V V V A W ℃ ℃ isc website:www.iscsemi.