2SA965 Overview
IE= 0 VEBO Emitter-base breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(on) Base-Emitter on Voltage VCE = -5V, IC= -500mA ICBO Collector Cutoff Current VCB= -120V;.
| Part number | 2SA965 |
|---|---|
| Datasheet | 2SA965-INCHANGE.pdf |
| File Size | 209.52 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
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IE= 0 VEBO Emitter-base breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(on) Base-Emitter on Voltage VCE = -5V, IC= -500mA ICBO Collector Cutoff Current VCB= -120V;.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| 2SA965 | Silicon PNP Transistor | Toshiba Semiconductor | |
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2SA965 | PNP Transistor | JCET |
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2SA965-Y | PNP Plastic-Encapsulate Transistors | MCC |