The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA965
Power Amplifier Applications Driver-Stage Amplifier Applications
2SA965
Unit: mm
• Complementary to 2SC2235.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−120
V
Collector-emitter voltage
VCEO
−120
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−800
mA
Base current
IB
-80
mA
Collector power dissipation
PC
900
mW
Junction temperature Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
JEDEC
TO-92MOD
Note1: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
TOSHIBA
2-5J1A
temperature, etc.
2SA965 Datasheet
