2SA966 - Silicon PNP Epitaxial Type Transistor

Toshiba

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2SA966 silicon pnp epitaxial type transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SA966
Manufacturer	Toshiba
File Size	114.65 KB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	2SA966 Datasheet

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA966 Audio Power Amplifier Applications 2SA966 Unit: mm • Complementary to 2SC2236 and 3-W output applications. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −30 −30 −5 −1.5 -0.15 900 150 −55 to 150 V V V A A mW °C °C Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.