Datasheet Details
| Part number | 2SA965 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.52 KB |
| Description | PNP Transistor |
| Datasheet | 2SA965-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA965 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.52 KB |
| Description | PNP Transistor |
| Datasheet | 2SA965-INCHANGE.pdf |
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·Power amplifier applications ·Driver stage amplifier applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SA965 APPLICATIONS ·Designed for Switching and amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ Ta<50℃ J Junction Temperature Tstg Storage Temperature Range VALUE -120 -120 -5 -0.8 -0.9 150 -55~150 UNIT V V V A W ℃ ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-base breakdown Voltage IC= -10mA;
IE= 0 VEBO Emitter-base breakdown Voltage IE= -1mA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA965 | Silicon PNP Transistor | Toshiba Semiconductor |
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2SA965 | PNP Transistor | JCET |
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2SA965-Y | PNP Plastic-Encapsulate Transistors | MCC |
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2SA965TM | PNP Transistor | SeCoS |
| Part Number | Description |
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| 2SA985 | PNP Transistor |
| 2SA1002 | Silicon PNP Power Transistor |
| 2SA1006A | PNP Transistor |
| 2SA1006B | PNP Transistor |
| 2SA1009A | PNP Transistor |