Inchange Semiconductor 2SA965
PNP Transistor
| Part No. | 2SA965 |
|---|---|
| Datasheet | 2SA965 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Power amplifier applications●Driver stage amplifier applications
●Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SA965
APPLICATIONS
●Designed for Switching and amplificationABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ Ta<50℃ J Junction Temperature Tstg Storage Temperature Range VALUE -120 -120 -5 -0.8 -0.9 150 -55~150 UNIT V V V A W ℃ ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-base breakdown Voltage IC= -10mA; IE= 0 VEBO Emitter-base breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(on) Base-Emitter on Voltage VCE = -5V, IC= -500mA ICBO Collector Cutoff Current VCB= -120V; IE= 0 IEBO Emitter Cutoff Current hFE DC Current Gain VEB= -5V; IC= 0 IC=-100mA ; VCE= -5V 2SA965 MIN TYP.
