Datasheet Details
| Part number | 2SA968A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 92.04 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA968A_InchangeSemiconductor.pdf |
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Overview: www.DataSheet4U.net Inchange Semiconductor Silicon PNP Power Transistors Product Specification 2SA968 2SA968A.
| Part number | 2SA968A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 92.04 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA968A_InchangeSemiconductor.pdf |
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·With TO-220 package ·Complement to type 2SC2238 ·High breakdown votage APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SA968 VCBO Collector-base voltage 2SA968A Open emitter 2SA968B 2SA968 VCEO Collector-emitter voltage 2SA968A Open base 2SA968B VEBO Emitter-base voltage Open collector IC Collector current IE Emitter current PT Total power dissipation TC=25℃ Tj Junction temperature Tstg Storage temperature VALUE -160 -180 -200 -160 -180 -200 -5 -1.5 1.5 25 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Silicon PNP Power Transistors Product Specification 2SA968 2SA968A 2SA968B CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage 2SA968 2SA968A IC=-10mA;
IB=0 2SA968B V(BR)EBO Emitter-base breakdown voltage IE=-1mA;
IC=0 VCEsat Collector-emitter saturation voltage IC=-0.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA968A | Silicon PNP Transistor | Toshiba |
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2SA968A | Silicon POwer Transistors | SavantIC |
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2SA968 | Silicon PNP Transistor | Toshiba |
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2SA968 | PNP Transistor | INCHANGE |
|
2SA968 | Silicon POwer Transistors | SavantIC |
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