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2SA963 Datasheet Power Transistor

Manufacturer: Inchange Semiconductor

Overview: www.DataSheet4U.net Inchange Semiconductor Product Specification Silicon PNP Power Transistors.

General Description

·With TO-126 package ·Complement to type 2SC2209 ·High collector power dissipation APPLICATIONS ·For low-frequency power amplification PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION · Absolute Maximun Ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -50 -40 -5 -1.5 -3 10 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

2SA963 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-2mA;IB=0 -40 V V(BR)CBO VCEsat Collector-base breakdown voltage IC=-1mA ;IE=0 IC=-1.5A ;IB=-150mA -50 V Collector-emitter saturation voltage -1.0 V VBEsat Base-emitter saturation voltage IC=-2A ;IB=-0.2A B -1.5 V μA μA μA ICBO Collector cut-off current VCB=-20V;

IE=0 -1 ICEO Collector cut-off current VCE=-10V;

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