2SA968B - Silicon PNP Transistor

Toshiba

Download the 2SA968B datasheet PDF. This datasheet also covers the 2SA968 variant, as both devices belong to the same silicon pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

. High Transition Frequency; fT=100MHz (Typ. ) . Complementary to 2SC2238, 2SC2238A, and 2SC2238B Unit in mm i j. 0.3 MAX 03.6±O. Z HT _©i r.

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2SA968B silicon pnp transistor by Toshiba - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2SA968-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2SA968B
Manufacturer	Toshiba
File Size	93.93 KB
Description	Silicon PNP Transistor
Datasheet	2SA968B Datasheet

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Other Datasheets by Toshiba

Part Number	Description
2SA968	Silicon PNP Transistor
2SA968A	Silicon PNP Transistor
2SA962A	SILICON PNP EPITAXIAL TYPE TRANSISTOR
2SA940	Silicon PNP Transistor
2SA1021	Silicon PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA968 2SA968A 2SA968B POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES . High Transition Frequency; fT=100MHz (Typ.) . Complementary to 2SC2238, 2SC2238A, and 2SC2238B Unit in mm i j. 0.3 MAX 03.6±O.Z HT _©i r MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage 2SA968 2SA968A 2SA968B Collector- Emitter Voltage 2SA968 2SA968A 2SA968B Emitter-Base Voltage Collector Current Emitter Current Collector Power , Dissipation K „°,,w Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic IE PC T J Tstg RATING -160 -180 -200 -160 -180 -200 -5 -1.5 1.5 UNIT V V V A A 25 W 150 -55vL50 °C °C 1.5 MAX. 2.54 1. BASE 2. COLLECTOR (HEAT SINK) 3.