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SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SA968 2SA968A 2SA968B
POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS.
FEATURES . High Transition Frequency; fT=100MHz (Typ.) . Complementary to 2SC2238, 2SC2238A, and 2SC2238B
Unit in mm
i j. 0.3 MAX 03.6±O.Z
HT
_©i
r
MAXIMUM RATINGS (Ta=25°c)
CHARACTERISTIC
Collector-Base Voltage
2SA968 2SA968A 2SA968B
Collector- Emitter Voltage
2SA968 2SA968A
2SA968B
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power ,
Dissipation
K
„°,,w
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO ic IE PC T
J
Tstg
RATING -160 -180 -200 -160 -180 -200 -5 -1.5 1.5
UNIT V
V
V A A
25 W
150 -55vL50
°C °C
1.5 MAX. 2.54
1. BASE 2. COLLECTOR (HEAT SINK) 3.