Datasheet Details
| Part number | 2SA968B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.22 KB |
| Description | PNP Transistor |
| Datasheet | 2SA968B-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA968B.
| Part number | 2SA968B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.22 KB |
| Description | PNP Transistor |
| Datasheet | 2SA968B-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage : V(BR)CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2238B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A IE Emitter Current- Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA968B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA968B | Silicon PNP Transistor | Toshiba |
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2SA968B | Silicon POwer Transistors | SavantIC |
|
2SA968 | Silicon PNP Transistor | Toshiba |
|
2SA968 | Silicon POwer Transistors | SavantIC |
|
2SA968A | Silicon PNP Transistor | Toshiba |
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| 2SA1002 | Silicon PNP Power Transistor |
| 2SA1006A | PNP Transistor |
| 2SA1006B | PNP Transistor |
| 2SA1009A | PNP Transistor |