High DC Current Gain-
: hFE = 750(Min)@ IC= -1.5A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -50V(Min)
With TO-220C package
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio frequency power amplifier
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isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -50V(Min) ·With TO-220C package ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
-4
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SB1005
isc website：www.iscsemi.
2SB1005 Datasheet
