2SB1009
2SB1009 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Collector Current -IC= -2A
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -32V(Min)
- Good Linearity of h FE
- Low Saturation Voltage
- plement to Type 2SD1380
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
VCEO
Collector-Emitter Voltage
-32
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-2
Collector Current-Pulse
Collector Power Dissipation
@ TC=25℃ PC
Collector Power Dissipation
@ Ta=25℃
Junction...
