2SB1009 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SB1009 SYMBOL TYP. MAX UNIT V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB Collector-emitter breakdown voltage IC=-10mA ;IB=0 IC=-2.0A; IB=-0.2A IC=-2.0A ;IB=-0.2A VCB=-20V;.