With TO-126 package
Complement to type 2SD1380 APPLICATIONS
For use in low frequency power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB1009
DESCRIPTION ·With TO-126 package ·Complement to type 2SD1380 APPLICATIONS ·For use in low frequency power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -40 -32 -5 -2 0.1 W UNIT V V V A
SavantIC Semiconductor
www.DataSheet4U.
2SB1009 Datasheet
