2SB1009 Overview
Description
With TO-126 package - Complement to type 2SD1380 APPLICATIONS - For use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -40 -32 -5 -2 0.1 W UNIT V V V A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SB1009 SYMBOL TYP. MAX UNIT V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB Collector-emitter breakdown voltage IC=-10mA ;IB=0 IC=-2.0A; IB=-0.2A IC=-2.0A ;IB=-0.2A VCB=-20V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-500mA ; VCE=-5V IC=-500mA ; VCE=-5V f=1MHz ; VCB=-10V -32 V Collector-emitter saturation voltage -0.8 V Base-emitter saturation voltage -2.0 V Collector cut-off current -1 µA Emitter cut-off current -1 µA DC current gain 40 DC current gain 82 390 Transition frequency 100 MHz Collector output capacitance 50 pF 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1009 Fig.2 Outline dimensions 3.
