2SB1001 - Silicon PNP Epitaxial Transistor

Hitachi Semiconductor (now Renesas)

Datasheet Details

Part number	2SB1001
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	32.19 KB
Description	Silicon PNP Epitaxial Transistor
Datasheet	2SB1001 Datasheet

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number	Description
2SB1000	LOW FREQUENCY POWER AMPLIFIER
2SB1000A	LOW FREQUENCY POWER AMPLIFIER
2SB1002	Silicon PNP Transistor
2SB1012	Silicon PNP Epitaxial Transistor
2SB1012K	Silicon PNP Epitaxial Transistor

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2SB1001 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD1367 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1001 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) * PC * Tj Tstg 2 1 Ratings –20 –16 –6 –2 –3 1 150 –55 to +150 Unit V V V A A W °C °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 × 20 × 0.