| Part Number | 2SB1009 Datasheet |
|---|---|
| Manufacturer | ROHM |
| Overview | . . |
The 2SB1009 is a Epitaxial Planar PNP Silicon Transistor.
| Part Number | 2SB1009 Datasheet |
|---|---|
| Manufacturer | ROHM |
| Overview | . . |
| Part Number | 2SB1009 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-126 package ·Complement to type 2SD1380 APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ab. IC=-2.0A ;IB=-0.2A VCB=-20V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-500mA ; VCE=-5V IC=-500mA ; VCE=-5V f=1MHz ; VCB=-10V -32 V Collector-emitter saturation voltage -0.8 V Base-emitter saturation voltage -2.0 V Collector cut-off current -1 µA Emitter cut-off current -1 µA DC curren. |
| Part Number | 2SB1009 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Collector Current -IC= -2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -32V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD1380 ·Minimum Lot-to-Lot variations f. V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB=0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -20V; IE= 0 . |