Datasheet Details
| Part number | 2SB1009 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.33 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1009-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB1009 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.33 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1009-INCHANGE.pdf |
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·High Collector Current -IC= -2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -32V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD1380 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -3 A 10 W 1.2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1009 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
IB=0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1009 | Epitaxial Planar PNP Silicon Transistor | Rohm |
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2SB1009 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1005 | PNP Transistor |
| 2SB1007 | PNP Transistor |
| 2SB1015 | PNP Transistor |
| 2SB1016 | PNP Transistor |
| 2SB1017 | PNP Transistor |
| 2SB1018 | PNP Transistor |
| 2SB1018A | PNP Transistor |
| 2SB1019 | PNP Transistor |
| 2SB1020 | PNP Transistor |
| 2SB1021 | PNP Transistor |