High Collector Current -IC= -2A
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -32V(Min)
Good Linearity of hFE
Low Saturation Voltage
Complement to Type 2SD1380
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Desig
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isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector Current -IC= -2A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -32V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD1380 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-32
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25℃ PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
-3
A
10 W
1.
2SB1009 Datasheet
