Datasheet Details
| Part number | 2SB1005 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.30 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1005-INCHANGE.pdf |
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Overview: isc Silicon PNP Darlington Power Transistor.
| Part number | 2SB1005 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.30 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1005-INCHANGE.pdf |
|
|
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·High DC Current Gain- : hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -50V(Min) ·With TO-220C package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -4 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1005 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0 V(BR)CBO Collector-base breakdown voltage IC=-1mA, IE=0 VCE(sat)-1 Collector-Emitter Saturation voltage IC= -1.5A ,IB= -30mA VCE(sat)-2 Collector-Emitter Saturation voltage IC= -4A ,IB= -40mA ICBO Collector Cutoff Current VCB= -50V, IE= 0 IEBO Emitter Cutoff Current VEB= -5V;
IC= 0 hFE-1 DC Current Gain IC= -1.5A ;
VCE= -3V hFE-2 DC Current Gain IC= -4A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1005 | SILICON POWER TRANSISTOR | SavantIC |
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