2SB1005 Datasheet and Specifications PDF

The 2SB1005 is a PNP Transistor.

Datasheet4U Logo
Part Number2SB1005 Datasheet
ManufacturerInchange Semiconductor
Overview ·High DC Current Gain- : hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -50V(Min) ·With TO-220C package ·Minimum Lot-to-Lot variations for robust device performance and. -base breakdown voltage IC=-1mA, IE=0 VCE(sat)-1 Collector-Emitter Saturation voltage IC= -1.5A ,IB= -30mA VCE(sat)-2 Collector-Emitter Saturation voltage IC= -4A ,IB= -40mA ICBO Collector Cutoff Current VCB= -50V, IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain I.
Part Number2SB1005 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220C package ·High DC Current Gain ·DARLINGTON APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN 1 2 3 Base Collector; connected to mounting base Emitter DESCRIPTION . t-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=-30mA, IB=0 IC=-1mA, IE=0 IC=-1.5A ,IB=-30mA IC=-4A ,IB=-40mA VCB=-50V, IE=0 VEB=-5V; IC=0 IC=-1.5A ; VCE=-3V IC=-4A ; VCE=-3V IF=-4A 750 100 MIN -50 -50 2SB1005 SYMBOL V(BR)CEO V(BR)CBO VCEsat VCEsat ICBO IEBO hFE-1.