Inchange Semiconductor 2SB1007
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SB1007 |
|---|---|
| Datasheet | 2SB1007 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min)●Good Linearity of hFE
●Complement to Type 2SD1378
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.7 A Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ 10 W 1 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1007 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -2mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= -50μA; IC=0 VCE(sat...