Datasheet Details
| Part number | 2SB1007 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.35 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1007-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB1007 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.35 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1007-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Complement to Type 2SD1378 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.7 A Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ 10 W 1 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1007 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -2mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1007 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SB1018 | PNP Transistor |
| 2SB1018A | PNP Transistor |
| 2SB1019 | PNP Transistor |
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| 2SB1021 | PNP Transistor |