Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
Good Linearity of hFE
Complement to Type 2SD1378
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low frequency power amplifier applications.
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isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Complement to Type 2SD1378 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-0.7
A
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃
10 W
1
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SB1007
isc website：www.iscsemi.
2SB1007 Datasheet
