| Part Number | 2SB1007 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Complement to Type 2SD1378 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPL.
kdown Voltage IC= -2mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Vltage
IE= -50μA; IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA
ICBO
Collector Cutoff Current
VCB= -50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -100mA; VCE= -3V
* . |
2SB1007 Datasheet and Specifications PDF
The 2SB1007 is a PNP Transistor.
| Part Number | 2SB1007 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-126 package ·Complement to type 2SD1378 ·High breakdown voltage APPLICATIONS ·Low frequency power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base. er cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-2mA ;IB=0 IC=-50µA ;IE=0 IE=-50µA ;IC=0 IC=-0.5A ;IB=-50mA VCB=-50V; IE=0 VEB=-4V; IC=0 IC=-0.1A ; VCE=-3V IE=0; VCB=-10V;f=1MHz IE=50mA ; VCE=-10V 82 14 100 MIN -80 -80 -5 -0.2 TYP. 2SB1007 SYMBOL V(BR)CEO V. |