High DC Current Gain-
: hFE = 1000(Min)@ IC= -5A
Collector-Emitter Sustaining Voltage-
: = V(BR)CEO -120V(Min)
Complement to Type 2SD1436
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low frequency power amplifie
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isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage-
: = V(BR)CEO -120V(Min) ·Complement to Type 2SD1436 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-15
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SB1032
isc website：www.iscsemi.
2SB1032 Datasheet
