2SB1063 Overview
·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@IC= -3A ·Good Linearity of hFE ·Wide Area of Safe Operation ·plement to Type 2SD1499 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplification. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...
