2SB1063 Overview
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-3A ;IB=-0.3A IC=-3A ; f=1MHz 20 40 20 MIN 2SB1063 SYMBOL VCEsat VBE ICBO IEBO hFE-1...
