Datasheet Details
| Part number | 2SB1063 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.55 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1063-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB1063 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.55 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1063-INCHANGE.pdf |
|
|
|
·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@IC= -3A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1499 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1063 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -3A;
IB= -0.3A VBE(on) Base-Emitter On Voltage IC= -3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1063 | Silicon PNP Transistor | Panasonic Semiconductor |
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2SB1063 | SILICON POWER TRANSISTOR | SavantIC |
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| 2SB1015 | PNP Transistor |
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| 2SB1017 | PNP Transistor |
| 2SB1018 | PNP Transistor |