Datasheet Details
| Part number | 2SB1064 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.68 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1064-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB1064 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.68 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1064-INCHANGE.pdf |
|
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·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -2A ·Wide Area of Safe Operation ·Complement to Type 2SD1505 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -4.5 A 1.5 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1064 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1064 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1064 | Epitaxial Planar PNP Silicon Transistor | Rohm |
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2SB1064 | SILICON POWER TRANSISTOR | SavantIC |
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| 2SB1015 | PNP Transistor |
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| 2SB1018 | PNP Transistor |