Datasheet Details
| Part number | 2SB1069 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.86 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1069-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB1069 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.86 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1069-INCHANGE.pdf |
|
|
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·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -2A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 1.4 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1069 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1069 | SILICON POWER TRANSISTOR | SavantIC |
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2SB1069A | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1063 | PNP Transistor |
| 2SB1064 | PNP Transistor |
| 2SB1065 | PNP Transistor |
| 2SB1005 | PNP Transistor |
| 2SB1007 | PNP Transistor |
| 2SB1009 | PNP Transistor |
| 2SB1015 | PNP Transistor |
| 2SB1016 | PNP Transistor |
| 2SB1017 | PNP Transistor |
| 2SB1018 | PNP Transistor |