2SB1069 - PNP Transistor

Inchange Semiconductor

General Description

Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -2A High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for low voltage switching applications.

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2SB1069 pnp transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SB1069
Manufacturer	Inchange Semiconductor
File Size	212.86 KB
Description	PNP Transistor
Datasheet	2SB1069 Datasheet

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -2A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 1.4 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1069 isc website：www.iscsemi.