2SB1069 Overview
Key Specifications
Max Operating Temp: 150 °C
Description
With TO-220 package - High speed switching - Low collector saturation voltage APPLICATIONS - For low-voltage switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION SYMBOL PARAMETER 2SB1069 VCBO Collector-base voltage 2SB1069A 2SB1069 VCEO Collector-emitter voltage 2SB1069A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 Open collector Open base -40 -5 -4 -8 1.4 W V A A Open emitter -50 -20 V CONDITIONS VALUE -40 V UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SB1069 IC=-10mA ,IB=0 2SB1069A IC=-2A; IB=-0.1A IC=-2A; IB=-0.1A VCB=-40V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-1A ; VCE=-2V IC=-0.5A ; VCE=-5V CONDITIONS 2SB1069 2SB1069A SYMBOL MIN -20 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -40 -0.5 -1.5 -50 -50 45 60 150 260 MHz V V µA µA VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Switching times ton tstg tf Turn-on time Storage time Fall time IC=-2A; IB1=-IB2=-0.2A 0.3 0.4 0.1 µs µs µs hFE-2 classifications R 60-120 Q 90-180 P 130-260 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1069 2SB1069A Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3.
