2SB1063 Datasheet
2SB1063 Datasheet (Panasonic)
Panasonic
Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 ■ Features • Extremely satisfactory linearity of the forward current transfer .
* Extremely satisfactory linearity of the forward current transfer ratio hFE
* Wide safe operation area
* High transition frequency fT
* Full-pack package which can be installed to the heat sink with one screw
16.7±0.3
Unit: mm
0.7±0.1
10.0±0.2 5.5±0.2
4.2±0.2
4.2±0.2 2.7±0.2
7.5±0.2
φ 3.1±0.1
.
2SB1063 Datasheet (SavantIC)
SavantIC
·With TO-220Fa package ·Complement to type 2SD1499 ·Wide area of safe operation ·High fT APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 Emitter Collector Base DESCRIPTION Absol.
DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-3A ;IB=-0.3A IC=-3A ; VCE=-5V VCB=-100V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-3A ; VCE=-5V IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V; f=1MHz 20 40 20 MIN 2SB1063 SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE-2 .
2SB1063 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@IC= -3A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1499 ·Minimum Lot-to-Lot variations for robust device perfo.
ltage IC= -3A; IB= -0.3A VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -5V ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE-1 DC Current Gain IC= -20mA; VCE= -5V hFE-2 DC Current Gain IC= -1A; VCE= -5V hFE-3 DC Current Gain IC= -3A; VCE.