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2SB1106 - PNP Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) High DC Current Gain- : hFE=1000(Min)@ (VCE= -3V, IC= -3A) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for low frequency power amplifiers applications.

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Datasheet Details

Part number 2SB1106
Manufacturer INCHANGE
File Size 209.95 KB
Description PNP Transistor
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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE=1000(Min)@ (VCE= -3V, IC= -3A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -10 A 40 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1106 isc website：www.iscsemi.
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