2SB1106
2SB1106 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
- High DC Current Gain-
: h FE=1000(Min)@ (VCE= -3V, IC= -3A)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
VCEO
Collector-Emitter Voltage
-120
VEBO
Emitter-Base Voltage
-7
Collector Current-Continuous
-6
Collector Current-Peak
Collector Power Dissipation @TC=25℃
Junction Temperature
-10
℃
Tstg
Storage...
