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Inchange Semiconductor
2SB1136
DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) - Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.)@ IC= -6A - plement to Type 2SD1669 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for relay drivers,high-speed inverters,converters and other general high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -50 VEBO Emitter-Base Voltage -6 Collector Current-Continuous -12 Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Junction Temperature -15 2...