| Part Number | 2SB1136 Datasheet |
|---|---|
| Manufacturer | SANYO |
| Overview |
Ordering number:2092B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1136/2SD1669
50V/12A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters, and other genral hig.
* Low-saturation collector-to-emitter voltage : VCE(sat)= *0.5V (PNP), 0.4V (NPN) max. * Wide ASO leading to high resistance to breakdown. * Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SB1136/2SD1669] ( ) : 2SB1136 Specifications Absolute Maximum Ratings at Ta = 25˚. |
2SB1136 Datasheet and Specifications PDF
The 2SB1136 is a PNP Transistor.
| Part Number | 2SB1136 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220F package ·Complement to type 2SD1669 ·Low collector saturation voltage ·Wide ASO APPLICATIONS ·Relay drivers ·High speed inverters,converters ·General high current switching applications . se breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE=; IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-6A; IB=-0.6A VCB=-40V; IE=0 VEB=-4V; IC=0 IC=-1A ;. |
| Part Number | 2SB1136 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.)@ IC= -6A ·Complement to Type 2SD1669 ·Minimum Lot-to-Lot variations for robust de. ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitte. |