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2SB1136 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.)@ IC= -6A Complement to Type 2SD1669 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay driver

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INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1136 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.)@ IC= -6A ·Complement to Type 2SD1669 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers,high-speed inverters,converters and other general high-current switching applications.