Datasheet Details
| Part number | 2SB1136 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.62 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1136-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1136.
| Part number | 2SB1136 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.62 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1136-INCHANGE.pdf |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.)@ IC= -6A ·Complement to Type 2SD1669 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers,high-speed inverters,converters and other general high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -15 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1136 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1136 | PNP Transistor | Sanyo Semicon Device |
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2SB1136 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1133 | PNP Transistor |
| 2SB1134 | PNP Transistor |
| 2SB1135 | PNP Transistor |
| 2SB1101 | PNP Transistor |
| 2SB1102 | PNP Transistor |
| 2SB1103 | PNP Transistor |
| 2SB1105 | PNP Transistor |
| 2SB1106 | PNP Transistor |
| 2SB1145 | PNP Transistor |
| 2SB1149 | PNP Transistor |