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2SB1165 - PNP Transistor

General Description

Low Collector Saturation Voltage- : VCE(sat)= -0.55V(Max)@IC= -3A High fT Good Linearity of hFE Fast switching time Complement to Type 2SD1722 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay driver

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.55V(Max)@IC= -3A ·High fT ·Good Linearity of hFE ·Fast switching time ·Complement to Type 2SD1722 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers,high-speed inverters and converters applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage -60 V -50 V -6 V IC Collector Current-Continuous -5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -8 A 20 W 1.