2SB1225 - PNP Transistor

Inchange Semiconductor

General Description

High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -5A)

Large Current Capability and Wide ASO.

Low collector-to-emitter saturation voltage Complement to Type 2SD1827 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Des

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2SB1225 pnp transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SB1225
Manufacturer	Inchange Semiconductor
File Size	204.32 KB
Description	PNP Transistor
Datasheet	2SB1225 Datasheet

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -5A) ·Large Current Capability and Wide ASO. ·Low collector-to-emitter saturation voltage ·Complement to Type 2SD1827 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in control of motor drivers, printer hammer drivers, and constant-voltage regulators.