2SB1230
2SB1230 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
- High Current Capability
- Wide Area of Safe Operation
- plement to Type 2SD1840
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for motor drivers, converters and other general
High-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-110
VCEO
Collector-Emitter Voltage
-100
VEBO
Emitter-Base Voltage
-6
Collector Current-Continuous
-15
Collector Current-Pulse
-25
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power...
