2SB1230 Overview
Description
With TO-3PN package - Wide area of safe operation - Complement to type 2SD1840 - Low collector saturation voltage APPLICATIONS - Motor drivers,relay drivers,converters and other general high-current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SB1230 Fig.1 simplified outline (TO-3PN) and symbol SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current -peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 100 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -110 -100 -6 -15 -25 -5 3.0 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-5mA;RBE=< IC=-1mA; IE=0 IE=-1mA; IC=0 IC=-6A; IB=-0.6A IC=-6A; IB=-0.6A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1.5A ; VCE=-2V IC=-6A ; VCE=-2V 50 20 MIN -100 -110 -6 2SB1230 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE sat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V V V -0.8 -1.5 -100 -100 140 V V µA µA hFE-1 Classifications P 50-100 Q 70-140 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1230 Fig.2 outline dimensions 3.
