2SB1230 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Current Capability ·Wide Area of Safe Operation ·plement to Type 2SD1840 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, converters and other general High-current switching applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1230 TC=25℃...