Datasheet Details
| Part number | 2SB1231 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.46 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1231-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB1231.
| Part number | 2SB1231 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.46 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1231-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD1841 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, converters and other general High-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -25 A ICP Collector Current-Pulse -40 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 3 W 120 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ;
RBE=∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1231 | Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
| 2SB1230 | PNP Transistor |
| 2SB1236 | Silicon PNP Power Transistor |
| 2SB1205 | PNP Transistor |
| 2SB1223 | PNP Transistor |
| 2SB1225 | PNP Transistor |
| 2SB1226 | PNP Transistor |
| 2SB1227 | PNP Transistor |
| 2SB1228 | PNP Transistor |
| 2SB1253 | PNP Transistor |
| 2SB1254 | PNP Transistor |