2SB1231 Datasheet and Specifications PDF

The 2SB1231 is a Epitaxial Planar Silicon Transistor.

Key Specifications

Part Number2SB1231 Datasheet
ManufacturerSANYO
Overview Ordering number:EN3260A 2SB1231 : PNP Epitaxial Planar Silicon Transistor 2SD1841 : NPN Triple Diffused Planar Silicon Transistor 2SB1231/2SD1841 100V/25A Switching Applications w w w . D a t a S h .
* Large current capacity and wide ASO.
* Low saturation voltage. ( ) : 2SB1231 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collecto.
Part Number2SB1231 Datasheet
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD1841 ·Minimum Lot-to-Lot variations for robust device performa. otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ; RBE=∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A V.

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