2SB1230 Datasheet and Specifications PDF

The 2SB1230 is a PNP / NPN Epitaxial Planar Silicon Transistors.

Key Specifications

Max Operating Temp150 °C
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Part Number2SB1230 Datasheet
ManufacturerSANYO
Overview Ordering number : EN3259A 2SB1230 / 2SD1840 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1230 / 2SD1840 High-Current Switching Applications Applications • Motor.
* Large current capacity and wide ASO.
* Low saturation voltage. Specifications ( ) : 2SB1230 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation .
Part Number2SB1230 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3PN package ·Wide area of safe operation ·Complement to type 2SD1840 ·Low collector saturation voltage APPLICATIONS ·Motor drivers,relay drivers,converters and other general high-current swit. otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-5mA.
Part Number2SB1230 Datasheet
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD1840 ·Minimum Lot-to-Lot variations for robust device performa. ℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ; RBE=∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB=.

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