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2SB1236 - Silicon PNP Power Transistor

Description

High breakdown voltage.

Low collector output capacitance.

High transition frequency.

Complement to Type 2SD1857 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio amplifier, vol

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isc Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage. (BVCEO = -120V) ·Low collector output capacitance. ·High transition frequency. (fT = 50MHz) ·Complement to Type 2SD1857 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio amplifier, voltage regulator, and general purpose power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICP Collector Current-Pulse -3 A PC Collector Power Dissipation 10 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1236 isc website：www.iscsemi.
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